| 摘要 |
PURPOSE:To form a good quality oxidation film with a high speed, by generating magnetic field in vacuum vessel and also introducing O2 gas, at the time of forming thin film by ion plating method. CONSTITUTION:A fixed quantity of O2 gas is introduced in the belljar 1 through the valve 3 after exhausting the balljar 1 at a fixed vacuum degree by the vacuum pump through the duct 2. At the same time, glow discharge is caused between the evaporation source 5 and the base board 8 by the high voltage direct current source 9 and O2 gas is ionized. Also, ionized O2 gas is focused on the central plate of the belljar 1 by magnetic field generated by turning current on the focusing coil 11 and distribution density of O2 gas at the lower part of the board 8, is heightened. At the same time, current is supplied from the power source 6 for evaporation to the source 5 and the evaporation substance 4 is melted and evaporated. Accordingly, the molecule 4' of evaporated substance 4 is ionized and is reacted with ionized O2 gas distributed in the upper part of the source 5 densely and then, oxide is made. Moreover, the above oxide is forcibly adhered on the board 8 by electric field and oxide film is formed. |
