发明名称 |
Thickened anode contact Schottky diode production - involves electroplating by passing current in forward direction through diode to plating anode |
摘要 |
<p>Semiconductor diodes are produced on a semiconductor wafer with a continuous metal layer on its underside, serving as the cathode connection. Anode contacts corresponding to the individual diodes are provided on the top surface, insulated by a silica layer and strengthened by electroplating. The plating anode is placed in the electrolyte near the anode contacts on the semiconductor wafer. The cathode layer (6) is connected to the plating plant cathode (7) so that current flows in the forward direction through individual p-n junctions to corresponding anode contacts on which the plated reinforcement (9) is deposted.</p> |
申请公布号 |
DE2830761(A1) |
申请公布日期 |
1980.01.24 |
申请号 |
DE19782830761 |
申请日期 |
1978.07.13 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
CONZELMANN,GERHARD,DIPL.-PHYS. |
分类号 |
H01L21/288;H01L21/768;(IPC1-7):01L21/288;01L29/48 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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