发明名称 MAGNETIC BUBBLE MEMORY
摘要 <p>In a bubble memory of the type employing electrical current pulses to sequentially advance magnetic bubbles along preselected paths within a magnetic bubble layer, high speed operation is achieved through the use of two generally co-extensive conductive layers (25, 26) overlying the magnetic bubble layer, the two conductive layers being spaced apart by an insulating film (27). Each layer includes a pattern of apertures (30, 31 FIG. 3) therethrough, corresponding apertures in the two layers being slightly off-set from one another. Various sequences of current pulses (e.g. I1, I2, I3, I4 - FIG. 5) are applied to the conductive layers for advancing the bubbles along propagation paths defined by the aperture patterns. </p>
申请公布号 WO1980000113(A1) 申请公布日期 1980.01.24
申请号 US1979000386 申请日期 1979.06.05
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