| 发明名称 |
VERFAHREN ZUR AUSBILDUNG EINES NEGATIVEN RESISTMUSTERS |
| 摘要 |
<p>A method for forming a negative resist pattern which applies as a high energy beam-sensitive material a polymer consisting of components expressed by the general structural formula: <IMAGE> where: X=halogen or <IMAGE> (R2 is H or CH3) R1=H or CH3 n=1 to 3 m, l=integers having a relationship of 50</=m+l</=50,000.</p> |
| 申请公布号 |
DE2927838(A1) |
申请公布日期 |
1980.01.24 |
| 申请号 |
DE19792927838 |
申请日期 |
1979.07.10 |
| 申请人 |
NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORP. |
发明人 |
IMAMURA,SABURO;SUGAWARA,SHUNGO;SATO,HIROTSUGU |
| 分类号 |
G03C7/32;C09B55/00;G03F7/004;G03F7/038;G03F7/039;G03F7/20;H01L21/027;(IPC1-7):G03C1/68;G03F7/02 |
主分类号 |
G03C7/32 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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