| 摘要 |
PURPOSE:To extend the life and improve the reliability of light emission elements by limiting the stress strain on the side faces of pellets within 10kg/cm<2>. CONSTITUTION:Forming epitaxially an n-type layer 42 and a p-type layer 43 on an n-type GaP substrate 41 cut out of a single crystal made by a pull method, a wafer with a pn junction 44 is obtained. This wafer is separated into prescribed size pieces after forming electrodes 45 and 46. At this time, elastic stress strain 48 occurs from the machine cut faces 47. This stress strain affects the life of the light emission elements directly. Therefore, treat the cut face 47 for about 60 seconds using aqua regia of about 25 deg.C which will corrode the electrodes comparatively little and etch away the face about 1mum. By so doing, the stress strain 48 which occurred in cutting nearly disappears and the value of the stress strain becomes below 10kg/cm<2>. By so constructing, the life of the light emission elements can be lengthened and their characteristics can be stabilized. |
