Process for preparing hetrojunction solar-cell devices.

摘要

A process for manufacturing a heterojunction device, for example a solar cell, comprises placing an N-type silicon semi-conductor body (3) in a vacuum chamber (6); also placing in the chamber (6) a vessel (4) containing tin oxide or a mixture of tin oxide and indium oxide; evacuating the chamber (6); generating, such as by an electron beam (7), a stream (9) of oxide vapor; and directing the stream (9) into the silicon body (3) at an angle of incidence ( theta ) which is so selected, generally in the range 40 DEG to 70 DEG , as to provide substantially maximum efficiency of the device. The coated substrate is heated and thereafter metal electrodes are deposited on the coated substrate. A solar cell of sunlight conversion-efficiency above 5% is consistently obtainable by the process.