| 摘要 |
PURPOSE:To improve the characteristics such as the serial electric resistance of a gate, noise voltage, etc. by previously implanting the same conductivity type of impurity ions as that of a semiconductor chip substrate into a metal foil upon joining the substrate through the metal foil with a header by a eutectic technique. CONSTITUTION:Joining a semiconductor chip substrate through a metal foil with a header, boron ions for the p-type substrate, and phosphorus, antimony or arsenic ions for the n-type substrate are implanted respectively. For example, using a p-type silicon substrate 2, the epitaxial growth of a n-type layer 3 is first allowed to proceed thereon to form the insular layer 3 surrounded by a p-type region 2'. Then, a p-type gate 4, a n-type source 5, and a drain region 6 are provided in the layer 3. The semiconductor chip 1 made in this way is joined through a metal foil 7 to the layer 11 of the header 9 comprising Kovar 10 and gold plated layers 11. Thereupon, if a boron ion implanted layer 8 is provided to the metal foil 7, the characteristics such as gm, etc. are improved and incidental effects may be reduced. |
