发明名称 SELF-CORRECTING MEMORY CIRCUIT
摘要 <p>SELF-CORRECTING MEMORY CIRCUIT A circuit for storing data in a random access memory containing one defective bit per word. A separate read-only memory device or programmable logic array is provided to produce an interrupt bit whenever a memory location containing a defective bit is addressed, where a defective bit is defined as one that is stuck at 1 or stuck at 0. If an interrupt bit is generated the data word is read out from memory and compared to the original, If an equality exists, nothing further is required. If there is an inequality the data word is complemented and stored, and a flag bit is set. When data is read from memory, if the flag bit is set, the data word is complemented again before being used.</p>
申请公布号 CA1070432(A) 申请公布日期 1980.01.22
申请号 CA19770271161 申请日期 1977.02.07
申请人 XEROX CORPORATION 发明人 MARKLE, ROBERT E.
分类号 G06F12/16;G06F11/14;G06F11/16;(IPC1-7):06F13/06;11C29/00 主分类号 G06F12/16
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