| 摘要 |
<p>An n-channel storage FET is described having a source and a drain formed in a substrate and a floating storage gate entirely surrounded by an insulator on said substrate, wherein in use said storage gate is programmed by negatively charging it by channel injection using electrons heated in the channel between said source and said drain, and wherein the negative charge on said storage gate, after charging and in particular at the time of read-out, acts inductively on the channel between said source and said drain in such a way as to inhibit the drain-source current of the transistor. Details are given of the electrical discharge of such FETs by the Fowler-Nordheim tunnel effect and/or the gate surface effect.</p> |
