发明名称 |
ACOUSTIC MEMORY AND METHOD OF MANUFACTURING SAME |
摘要 |
That face of the non-epitaxied substrate of high resistivity which supports the junction 3 formed by the planar method is treated by a mesa attack in such a way that it is smaller than the opposite face 7. An insulating ring 4 covers the periphery of the junction and projects beyond the substrate. This ring has external dimensions smaller than those of the face 7 beyond which it projects. A metallic layer 6 ensuring an ohmic contact covers in particular the lateral walls of the diode created by the mesa attack except for those zones of these walls beyond which the insulating ring 4 projects. This metallization of the lateral walls acts as an electrode and connects the diodes generally formed on one and the same substrate to one another. |
申请公布号 |
JPS558699(A) |
申请公布日期 |
1980.01.22 |
申请号 |
JP19790082553 |
申请日期 |
1979.06.29 |
申请人 |
THOMSON CSF |
发明人 |
ARAN BEERU;BERUNAARU RU KUREERU;IBU ARUSHIYANBOORU |
分类号 |
G11C13/00;G06G7/195;G11C27/02;H01L41/08;H03H9/70 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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