| 摘要 |
<p>SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE COMPOSED OF INSULATED GATE FIELD-EFFECT TRANSISTORS In a semiconductor integrated circuit device composed of insulated gate field-effect transistors, the improvement comprising the facts that the insulated gate field-effect transistors having gate insulating films of substantially equal thicknesses are arranged on a principal surface of a semiconductor substrate in the shape of a matrix, that gate input columns of the transistors are formed of polycrystal silicon layers, and that some of the transistors are made the enhancement type, while the others are made the depletion type. Further, the respective transistors are formed by the self-alignment technique which employs the polycrystal silicon layers as a diffusion mask, and the depletion type transistors arc formed by implanting impurity ions opposite in the conductivity type to the substrate into selected areas of the surface of the substrate. Thus, a read only memory in a MOS-IC chip has its occupying area reduced remarkably.</p> |
