| 摘要 |
<p>PURPOSE:To avoid the influence of the diffrerence of the load resistance value between the source and the and of a memory transistor by the position of a selected memory by changing the transistor size of a selector transistor. CONSTITUTION:The transistor size of a selector transistor Q2 to selectively connect a bit line 1 of a memory cell array 2 to a sense amplifier 4 is changed by corresponding to the value of a load resistance between the source and the GND of a memory transistor Q1 connected to the bit line 1 selected by each selector transistor Q2. Consequently, when memory contents are the same, regardless of the position of the memory transistor, the potential of the drain of the selector transistor Q2 which is a potential that the sense amplifier 4 decides the contents of the memory can be made the same. Thus, the title semiconductor memory device which is not influenced by the difference of the load resistance value is obtained.</p> |
