| 摘要 |
PURPOSE:To obtain an element with a relatively large break-over voltage variation factor to ambient temperature by providing a thyristor and a heat sensing range in one semiconductor substrate and interconnecting said heat sensing range and the gate range of said thyristor with a resistor element with negative temperature coefficient. CONSTITUTION:An N-type base range 2 is diffusedly formed on a P-type anode substrate 1 working as emitter while surrounded with a P-type separator range 7, a P-type base range 3 is diffusedly formed inside said range 2, and an N-type cathode 4 is provided on said range 3. Further, a P-type range 8 is diffusedly formed at a sufficient distance from said range 3 at said range 2, and a P-type leak current increase range 9 is provided at the both ends of the upper section of said substrate 1. Thereafter, the whole surface of said substrate 1 is covered with a protective film 6, and a ribbon shaped polycrystalline Si resistor film 10 having the resistance value lowering with the rise of temperature is formed at a separator range 7. Next, opengings are provided on said film 6, and two sections of said films 10 are connected to ranges 8 and 3 respectively with Al wires. |
