| 摘要 |
A heretofore undiscovered suddenly conducting avalanche voltage effect is described with relationship to a new family of hybrid transistors. The devices constructed also exhibit magnetic sensitivity. The magnetic responsiveness of such devices creates a new family of magnetic sensors which utilize magnetic modulation of the avalanche voltage produced by the new effect. New transistor structure elements are incorporated in the devices. These include an impact ionization promoter means and an intrinsic, or high resistivity, depleted base region which extends at least partially from a collector toward an emitter. Minority carrier injection efficiency control means and transportation efficiency control means are also included. The character of the base region extending between the emissive junction and the collector is carefully controlled so that the product of the ionization current multiplication factor M and an electron-hole recombination probability factor alpha is less than unity. Within limits, any specifically desired avalanche voltage can be created by controlling the characteristics of the transistor structure. This voltage may then be varied bidirectionally by magnetic fields to form a new class of magnetic sensors. |
