Monolithic integrated semiconductor reference element - has surface silicon di:oxide layer with windows for emitter and base contacts whose metallising reaches up to pn-junction

摘要

The base (2) emitter (3) diode of the integrated element is operated in a blocking voltage breakdown. The integrated element has a silicon dioxide film (4) on the semiconductor surface, with windows for the emitter and base contacts. The contact metal film (5) of the base is drawn so far over the insulation silicon dioxide film as to cover the edge (7) of the pn-junction, emerging on the semiconductor surface. Preferably the emitter surrounds the base as a ring, partly diffused into the same. The base contact may be annular and in such instance the emitter is eccentric to the base contact. Alternatively, the base contact may be elliptic and/or the diffused emitter may be of elliptic configuration.