| 摘要 |
PURPOSE:To establish the semiconductor integrated circuit suitable for large scale integration, by making greater the difference between the transition voltages, through the constitution of two P-MOS transistors and two N-MOS transistors. CONSTITUTION:When the input voltage V1N is not greater than VTH(transition voltage), P-MOS transistors Q1, Q3 are conductive and N-MOS transistors Q2, Q4 are non-conductive, and the terminals N4, N5 are both at high voltage. At VTH<= VIN<=¦VDD-VTP¦ (threshold voltage), since the transistors Q3, Q4 are of high resistance, the terminal N5 is inverted to low voltage, and the terminal N4 keeps high voltage. On the other hand, at VDD-¦VTP¦<=VIN, the transistors Q1, Q3 are at OFF state and the transistors Q2, Q4 are ON state, and the terminals N4, N5 are both at low voltage. Accordingly, the transition of the output terminal of the latch circuit constituted with the two input NAND gates NG3, NG4 is taken place at VIN<=VDD- ¦VTP¦ and VIN<=VTN. |
