| 摘要 |
PURPOSE:To obtain an epitaxial layer of high quality by forming bottomed holes in parallel with a receiving hole on a lower plate with the receiving hole for a semi- conductor single crystal board and obtaining equilibrium solution for forming the epitaxial layer in the solution pool of an upper plate using the bottomed hole. CONSTITUTION:A lower plate 10 has a receiving hole 14 to receive a single crystal board 30, and in parallel with it, plural bottomed holes, 16a-16e, on the surface of the plate. These bottomed holes can be closed by filling closing lids 18 of the same material as the lower plate. When, for example, forming an epitaxial layer of GaAlAs, GaAs polycrystal is filled in the bottomed hole 16a and other bottomed holes are filled with the closing lids 18. In this state, two-component solution of Al and Ga is filled in the solution pool 22 perforating an upper plate 20 positioning the solution pool 22 on the polycrystal 32, and the solution 34 is saturated with As at the growth starting temperature. Next, cooling is started at a constant temperature gradient, and at the same time, the upper plate 20 is displaced sliding, thus the solution 34 is moved on the board 30 and epitaxial growth is started. By so doing, an epitaxial layer of very high quality can be formed on the board 30. |
