| 摘要 |
PURPOSE:To decrease the output amplitude by using the diode or MOSFET which always operates at the saturation region, and thus to reduce the charge /discharge current for the capacitor of the output side with reduction of the penetration current by the substrate effect in order to realize the low power consumption. CONSTITUTION:P-type MOSFETTP2 and N-type MOSFETTN2 which always operate under the saturation state are provided between the source of P-type MOSFETP1 forming the MOS inverter and high power source VDD' between the source of N-type MOSFETN1 forming the inverter and low power source VSS or at both of them. Then the gate of FETP1 is connected to the gate of FETN1; one end of capacitor C2 and crystal oscillator Q each is connected to the connection point between the two gates; and the other end of C2 and Q each is connectd to the common connection point of FETTP1 and TN1 via resitance R1. Otherwise diode D1 and D2 are connected in place of FETTP2 and TN2 which operate at the saturation region, thus forming the crystal oscillation circuit. |
