| 摘要 |
PURPOSE:To increase luminous efficiency while keeping a chip in fixed dimensions, by selection forming a diffusion layer of impurities on a substrate in a semiconductor, and by making up P and N layers in liquid-phase epitaxial shapes. CONSTITUTION:A N<+> layers are produced by diffusing S to P type GaAs 1 by using a SiO2 mask. A wafer 7 is manufactured by successively stacking a N layer 5 and a P layer 6 from the solutions of Si and GaAs. A substrate 1 is polished to expose the N<+> layers 4, ohmic electrodes 9, 10 are formed to the layers 4, 6, and the substrate is cut, thus obtaining a LED 13. This constitution concentrates driving currents to substantial luminous area S2 because the area S2 of the layer 4 is small and the thickness T of the layer 5 is thin as compared to the area S1 of a chip. Thus, the chip is formed in the desired dimensions, and the current density of a pn junction 12 becomes higher. |
