发明名称 Low-melting point glass sealed semiconductor device and method of manufacturing the same
摘要 A low-melting point glass sealed semiconductor device comprises a pair of ceramic substrates, each of which is shaped like an arch. The ceramic substrates are overlaid with each other, in such a manner as to define a space between them. Through this space, a gas generated from a thermosetting mounting agent used for adhesion is guided to the outside of the semiconductor device.
申请公布号 US5237206(A) 申请公布日期 1993.08.17
申请号 US19920969525 申请日期 1992.10.30
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YAHATA, MASAMITSU;TOZAWA, NORIYOSHI;TSUSHIMA, TOSHIKI
分类号 H01L21/50;H01L21/58;H01L23/10;H01L23/13 主分类号 H01L21/50
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