III-V ALLOY SEMICONDUCTOR AND ITS MANUFACTURE

摘要

PURPOSE:To produce a semiconductor having an arbitrary band gap by providing an alloy semiconductor having the composition of arsenide and nitride regulated arbitrarily. CONSTITUTION:A high frequency plasma generator 5 is coupled to a part of a reaction vessel 1. An N raw material gas introduced from an N raw material introducing portion 11 through a flow controller 8 of N raw material (ammonia or nitrogen gas) is activated by passing a plasma region 14 and introduced to the top of a substrate 2 of the reaction vessel 1. Because of this, the epitaxial growth of GaAsN alloy semiconductor film occurs on the GaAs substrate 2. Composition of nitrogen in GaAsN alloy semiconductor film is mainly determined by controlling the flow rate of N2 or NH3 used as a raw material for nitrogen and the flow rate of arsine as the raw material of arsenic. Thus, a semiconductor having an arbitrary band gap can be produced.