| 摘要 |
1. Process for the vapour phase deposition of a compound of type A B1-x Cx which is capable of radiating in the blue area of the spectrum, enabling the control of the concentration of the various constituent elements, of a type comprising the following phases : place a monocrystalline substrate (20) in the downstream part of a horizontal reaction chamber (2) located in an oven (1), and in the upstream part of this chamber, a source (17) of the least volatile element A, ensure a first run using the first means of introduction (19, 4) for the gaseous compounds containing the elements B and C, the temperatures and flow rates of which can be controlled, and cause halogen gas to react with the least volatile element A whilst fused, using the second means of introduction (3) in the "upstream" part maintained at a practically constant first temperature T1 throughout this part, in order to provide a reaction gas, and to mix the aforesaid reaction gases and gaseous compounds in the "downstream" part maintained at a second temperature T2 which is practically constant and lower than the first, over the monocrystalline substrate on which it is desired to deposit the compound of type A B1-x Cx , characterized in that the elements A, B and C are gallium, arsenic and germanium respectively, the monocrystalline substrate being gallium arsenide and in that DELTA T = T1 - T2 is greater than 100 degrees C in order that the coefficient x be > 0.04.
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