| 摘要 |
PURPOSE: To provide a method for forming a defect-free thin semiconductor layer which is formed by wafer adhesion. CONSTITUTION: A silicon substrate 10 having 1st conductivity, diffusion layer 12 formed on the silicon substrate while having a 2nd conductivity type and 2nd etch characteristics, thin epitaxial layer 14 having the 2nd conductivity type and 2nd etch characteristics and 1st wafer having a thin oxide layer 16 formed on the epitaxial layer are prepared, a 2nd wafer 18 having a silicon substrate, for which a thin oxide layer is formed on its surface, is prepared and the 1st and 2nd wafers are adhered. Then, the silicon substrate of 1st wafer is mechanically removed and in order to expose the lower epitaxial layer, the diffusion layer is removed by using the selective low energy dry etch plasma process of etch ratio between 1st and 2nd etch characteristics so as to remove the diffusion layer while minimizing plasma irradiation damage on the exposed epitaxial layer.
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