发明名称 MEMORY UNIT
摘要 <p>PURPOSE:To avoid the destruction of write-in circuit by the write-in voltage, by inserting a diode in series with the transistor in conductive state at write-in, in the write-in circuit consisting of CMOS transistors. CONSTITUTION:When a signal is received from the Y address input circuit 3, the transistor 10 is conductive, and the output of the inverter 14 is at high level. As this result, since the transistors 12, 13 are respectively conductive and cut-off, the output of the inverter 16 is at low level. On the other hand, the gate potential of the transistor 18 is at low level with the write-in control circuit 16. When the write-in voltage at low potential is fed from the VSS to the source of the transistor 18, since the diode 24 is the polarity back-biased, no write-in voltage is fed to the transistor 13. Accordingly, the destruction due to the write-in voltage of the transistor 13 can be prevented.</p>
申请公布号 JPS551662(A) 申请公布日期 1980.01.08
申请号 JP19780074989 申请日期 1978.06.20
申请人 MITSUBISHI ELECTRIC CORP 发明人 KIYOUMASU MIKIO;TOYOMOTO HIDEHARU;KAZAMA ISATO
分类号 G11C17/00;G11C16/06;G11C19/28 主分类号 G11C17/00
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