| 摘要 |
PURPOSE:To raise load transfer efficiency by providing a very small effective clearance between gate electrodes. CONSTITUTION:Small holes are provided at equal intervals on the oxidized film 11 formed on the (100) surface of an N-type Si, and recesses 13 having 111 surface are made through anisotropic etching. A P-type source drain is made by removing said film 11 and again forming oxidized film mask. Said surface of said N-type Si is covered with oxidized thin film 14 again, and subjected to CF4 resist mask 15 plasma etching to form deep recesses 13'. Next, a CCD is obtained through the process consisting of covering said surface with oxidized thin film 16, completely filling said recesses 13' with poly-Si 17, removing the layers between said recesses 13' of said poly-Si 17 forming insulating film 18, making openings, and interconnecting thus-obtained gate electrodes 17 with Al wires. Further, a wiring pattern is made by making said insulating film 18 larger than said oxidized thin film 16 in thickness, said gate electrodes 17 are extended onto input electrode side (oppositely to transfer direction), and a portion of said film 18 is covered. Thereby, this charge transfer system can be improved in transfer efficiency, charge accumulation capacity and dissolving power. |
