| 摘要 |
PURPOSE:To raise photoelectric conversion efficiency by forming Si3N4 film through directly nitriding an Si substrate, and by providing transparent electrodes. CONSTITUTION:When an n-thpe Si substrate 11 is immersed in 1,000 deg.C NH3 for treatment for one hour, Si3N4 thin film 12 is formed on the surface thereof. Said film 12 is very uniform in thickness since the rate of increase in thickness at about 30Angstrom is determined An about by the diffusion of N on the formation thereof. 100Angstrom Au electrole 13 and an Au-Sb alloy electrod 14 are attached to said film 12. The energy of light 15 is absorbed by said substrate 11, and excited positive hole electrons transfer to said electrodes 14 and 13 so that electromotive force is generated. The positive holes passing through said film 12 at this time easily reach said electrode 13 since the obstacle being in the way thereof to said substrate 11 is small, and do not recombine with each other at the interface between said film 12 and substrate 11 so that this photoelectric conversion semiconductor system is higher than the conventional ones of the kind in photoelectric conversion efficiency. The thin film of the material made by replacing O with N through letting NH3 work on SiO2 cam be ised in place of the film by direct nitrification. |
