| 摘要 |
PURPOSE:To produce a MISIC containing a thin film resistor made of a polycrystal Si by setting the polycrystal at a desired resistance value by an impurity ion implantation method. CONSTITUTION:A polycrystal Si layer 8 is formed on oxide film 5 and 7 on a n-type Si substrate 1 on which a p well region is formed. Then, all parts are removed only leaving the gate and the portions 8a to 8c serving as the variable resistance section. Then an ion implantation is conducted at the variable resistance section 8c to obtain a desired resistance value. Then, the oxide films 7 and 7' are removed in the portion corresponding to the source and drain regions with the portions 8a and 8b as a mask. An oxide film 9 is applied on the surface of the substrate 1 and the film 9 is removed in the portion corresponding to the p channel MOSFET forming section is removed. With the diffusion, the source and drain regions 10 and 11 and the both ends of the resistance section 8c are transformed to a p-type high density impurity region. Then, after the removal of the film 9, an oxide film 13 is formed and then, the film 13 is removed in the portion corresponding to the n-channel MOSFET forming one section. Subsequently, source and drain regions 14 and 15 are formed to make the gate electrode section 8a a n-type. |
