| 摘要 |
PURPOSE:To produce a MISIC containing a thin film resistor made of a polycrystal Si by setting the polycrystal at a desired resistance value by a impurity ion implantation method. CONSTITUTION:An oxide film is formed on a n-type Si substrate 1 on which a p well region and a polycrystal Si layer 8 is formed on an oxide film 7 made at the formation of the well. Then, all parts are removed only leaving the gate and the portions 8a to 8c serving as the variable resistance section. An ion implantation is conducted at the variable resistance section 8c to obtain the desired resistance value. The oxide films 7a and 7c is removed with portion corresponding to the source and drain and well regions 23 with the portions 8a to 8c as a mask. Then, an oxide film 9 is applied and the film is removed in the portion corresponding to the p-channel MOSFET forming section. The source, drain regions 10 and 11, a electrode withdrawing section 24, and the both ends 8c1 to 8c2 of the resistance section 8c are transformed to a p-type high density impurity region. Then, after the removal of the film, an oxide film 13 is formed. The film is removed from the n-channel MOSFET section and source and drain regions 14 and 15 are formed to make the gate electrode section 8a a n<+> type. |
