| 摘要 |
PURPOSE:To provide a light emitting element having simple structure in which the intensity of light having sub-peak wavelength can be restricted to that of light having main peak wavelength or below and the intensity of light having sub-peak wavelength can be controlled freely as required. CONSTITUTION:The semiconductor light emitting element comprises a p-type or n-type first semiconductor layer 1 having carrier density of 5X10<17>cm<-3> or below, a second semiconductor layer 2 of same conductivity type formed immediately thereon while having the carrier density of 5X10<17>cm<-3> or below, and a pn junction face 3c formed above the semiconductor layers with the opposite conductivity type being set on the upper side, wherein the band gap of the first semiconductor layer is smaller than that at the pn junction 3. The first semiconductor layer and/or the second semiconductor layer may serve as a substrate and/or one semiconductor layer forming the pn junction. |
