| 发明名称 |
SEMICONDUCTOR F.E.T. DEVICE |
| 摘要 |
In Locos N-channel MOST-IC's underpasses can be obtained below the locos pattern by performing, at the area where the underpasses are to be formed, an As or Sb implantation prior to providing the locos. By using the nitride mask as an implantation mask, the locos and the source/drain zones of the transistors can be provided in a self-registering manner with respect to the underpasses. |
| 申请公布号 |
AU506465(B2) |
申请公布日期 |
1980.01.03 |
| 申请号 |
AU19760020908 |
申请日期 |
1976.12.24 |
| 申请人 |
PHILIPS' GLOEILAMPENFABRIEKEN, N.V. |
发明人 |
E. KOOI;P.J.W. JOCHEMS;A.T. VAN ZANTEN |
| 分类号 |
H01L29/78;H01L21/265;H01L21/316;H01L21/32;H01L21/3205;H01L21/74;H01L21/822;H01L21/8234;H01L23/52;H01L23/535;H01L27/06;(IPC1-7):01L21/74;01L29/78;01L21/82;01L21/95 |
主分类号 |
H01L29/78 |
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