发明名称 |
Photoelectrical conversion device and generating system using the same |
摘要 |
An object of the present invention is to provide a photoelectrical conversion device in which recombination of carriers excited by light is prevented and the open voltage and the carrier range of positive holes are improved and to provide a generating system using the photoelectrical conversion device. The photoelectrical conversion device includes a p-layer, an i-layer, and an n-layer, wherein the photoelectrical conversion device being formed by stacking the p-layer, the i-layer and the n-layer each of which is made of non-single-crystal silicon semiconductor, the i-layer contains germanium atoms, the band gap of the i-layer is smoothly changed in a direction of the thickness of the i-layer, the minimum value of the band gap is positioned adjacent to the p-layer from the central position of the i-layer and both of a valence control agent to serve as a donor and another valence control agent to serve as an acceptor are doped into the i-layer. Further, at least either of the p-layer or the n-layer is formed into a stacked structure consisting of a layer mainly composed of group III elements of the periodic table and/or group V elements of the same and a layer containing the valence control agent and mainly composed of silicon atoms.
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申请公布号 |
US5563425(A) |
申请公布日期 |
1996.10.08 |
申请号 |
US19930149749 |
申请日期 |
1993.11.10 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SAITO, KEISHI;AOIKE, TATSUYUKI;SANO, MASAFUMI;NIWA, MITSUYUKI;HAYASHI, RYO;TONOGAKI, MASAHIKO |
分类号 |
H01L31/04;H01L31/052;H01L31/075;H01L31/20;(IPC1-7):H01L29/04;H01L31/36;H01L31/376 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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