| 摘要 |
PURPOSE:To constitute a unit which takes advantage of a MOS system addressing in two dimensions by reducing a switching noise by forming a read part, required to attain high-speed transmission, of a charge transfer element. CONSTITUTION:Several photo detection parts 1 are arrayed in the row and column directions on a semiconductor substrate and electric floating diffusion regions 5 are formed which transfer vertically signal charge from photo detection parts 1 to corresponding parts 1 respectively. At the end part of diffusion region 5, horizontal driving part 10 of a charge transfer element is formed and between each diffusion region 5 and horizontal driving part 10, gate part 9 is provided which applying a bias forming a fixed potential barrier. From the vertical scan circuit to each photo detection part 1, clock pulses for row selection are applied in sequence to open transfer gate regions 6, row by row, thereby transferring signal charge, equivalent to the quantity of detected light stored in photo detection part 1, to corresponding diffusion region 5. |
