| 摘要 |
A high density, read-only, mask programmed memory and memory cell fabricated with two layers of polycrystalline silicon (polysilicon) is disclosed. Elongated doped substrate regions form source/drain regions for the cells and are used as bit lines for the memory. The first layer of polysilicon defines gates for the cells; the second layer of polysilicon defines transverse work lines. Programming consists of selective contacts between the first and second layers of polysilicon over the active regions of the cells. A cell area of approximately 0.125 mils2 is realized.
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