| 摘要 |
PURPOSE:To obtain high-efficiency light-emission characteristics by fixing thickness of n-type and p-type GaP layer within special ranges, by reducing the donor density of a n-type GaP layer by steps as the position approach the p-type GaP layer. CONSTITUTION:On n-type GaP substrate 14, a n-type GaP layer is grown by making Ga solution 16 react n-type GaP substrate 14 doped with S, etc. Next, gas with NH3, for example, is supplied so as to grow a n-type GaP layer with much N2 and extremely-small donor density. Then, impurity vaporing source 19 is heated to grow a p-type GaP layer on the n-type GaP layer. Here, the thickness of the GaP layer on the substrate side is fixed to more than 10mum and that on the p-type GaP layer side to 10 to 35mum, so that a high-efficiency light emission characteristics can be obtained. In addition, actual donor densities ND1 and ND2 on the n-type GaP layer side and P-type GaP layer sides are fixed to 1-5X10<17>/cm<2> and 1-5X10<16>/ cm<2> respectively and ND1/ND2 between 3 and 20, so that further high efficient light emission characteristics can be obtained. |
