| 摘要 |
PURPOSE:To obtain the electric signals picked up in the past by adding the memory function secured by the transfer electrode onto the substrate forming the solid state pickup device via the function of the high-rate charge transmission of the transfer electrode not by drawing out the charge quantity in the form of the electric signals. CONSTITUTION:The charge quantity proportional to the amount of the incident rays is accumulated within image sensing element A for the period when the voltage of photo gate signal terminal phip is high, and the accumulated charge is transferred under vertical transfer electrode B in the period of the low voltage of phip to be then transferred to horizontal transfer electrode in sequence. These transfer electrodes constitute the pickup part and then converted to the voltage through amplifier G. And the present pickup signals are drawn out from output terminal OUT1. On the contrary, electrode rows D, E and F are cut off optically, and the charge is led from the pickup part to form the memory part. Then the past pickup signals are extracted from output terminal OUT2 of amplifier H. Thus, the signals independent in terms of the time can be obtained. |
