METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING SHALLOW TRENCH ISOLATION

摘要

A method of manufacturing semiconductor device, in which trenches (7) are formed in a surface (2) of a silicon body (1), which trenches are filled with silicon oxide (11). The filled trenches are used as field-oxide regions (12) in integrated circuits. The silicon oxide is deposited from a gas phase and is subsequently densified by means of a thermal treatment in an NO or N2O-containing atmosphere. The deposited silicon oxide can be densified in a very short period of time, and, in addition, the thermal treatment does not cause crystal defects. The method can suitably be used for "single wafer processing".