| 发明名称 |
Method of making silicon device with uniformly thick polysilicon |
| 摘要 |
Thickness control problems inherent in the chemical vapor deposition of polysilicon layers on silicon wafers are avoided by an improved vacuum deposition technique.
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| 申请公布号 |
US4179528(A) |
申请公布日期 |
1979.12.18 |
| 申请号 |
US19770797971 |
申请日期 |
1977.05.18 |
| 申请人 |
EASTMAN KODAK |
发明人 |
LOSEE, DAVID L;WILDER, ALVIN D |
| 分类号 |
C23C14/06;C23C14/14;C23C14/58;H01L21/20;H01L21/203;H01L21/28;H01L21/3215;H01L29/04;H01L31/02;(IPC1-7):H01L21/36;H01L21/38 |
主分类号 |
C23C14/06 |
| 代理机构 |
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