| 摘要 |
A gate electrode(4) of the semiconductor device of which current-amplifiection factor(hfe) changed by its gate voltage, was connected to its collector electrode(5c) to increase a breakdown voltage(BVceo) between the emitter and collector regions, thus a characteristic of the transistor [when VG = 0, hfe=600, BVCEO ; 60 V, BVCBO; 160(V) was improved. [when VG>30(V), hfe=10, BVCEO = BVCBO; 160 (V)
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