| 摘要 |
PURPOSE:To increase the life time of the bonding device itself as well as to eliminate the using limitation for the substrate material by giving the selective control and heating only to the surface of the junction part. CONSTITUTION:The substrate to which semiconductor element 2 is fixed is transferred to the lower part of junction tool 7 to be positioned with electrode 3. the surface of electrode 3 is irradiated and heated up via light source 8 and lens 9, and then the thermal energy amount is detected 10 for the incident rays from the reflected rays. The surface temperature of electrode 3 is detected from the detected thermal energy. When the surface temperature gets out of the set value, the voltage of light source 8 is controlled 11 to keep a constant level. Tool 7 falls during the irradiation period to joint the wire to electrode 3. In such constitution, only the junction surface is heated up with feeder 4 and others not heated and with no thermal stress applied. Thus, even such materials as to receive the plastic malformation at a low temperature can be applied to substrate 1 just through heating of the substrate with one junction process. Accordingly, the life time of the device can be increased with no limitation given to the substrate materials for junction. |
