| 摘要 |
PURPOSE:To increase the dielectric strength by setting the width covering from the end of the P-type penetration region forming the thyristor to the end of the ring- shaped N<+>-type region to 1.5-2.0 times as large as the width covering from the end of the P-type base region to the end of the N<+>-type region. CONSTITUTION:P-type penetration region 2 is formed by diffusion across N-type Si substrate 1 which is to be the N-type base region, and P-type emitter region 2' and P-type base region 3 are formed by diffusion on the upper and lower surface of substrate 1 each. Then N<+>-type emitter region 4 is provided within regions 3, and at the same time N<+>-type channel stopper region 5 is formed within substrate 1 outside region 3. In this case, space WN1 between the ends of region 2 and 5 is set 1.5-2.0 times as large as space WN2 between the ends of region 3 and 5. As a result, both the forward and backward dielectric strength of the thyristor can be enhanced, thus increasing the reliability. |
