MANUFACTURE OF THIN-FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To manufacture a thin-film transistor with high-speed operation and superior reproducibility, by forming source and drain regions by selectively applying a laser beam for promoting crystallization, and by setting the part to the channel part of a thin-film transistor in a low-resistance non-single crystal semiconductor with a conduction type of an N- or P-type. SOLUTION: Soda glass is used, where the soda glass has an ITO (pixel) electrode 18 being subjected to patterning as a transparent conductive film on a substrate 11. On the substrate 11, an I-type non-single crystal silicon film 13 is formed as a high-resistance semiconductor layer by the plasma CVD method. In the same manner, a single crystal silicon film 12 of an N-type conduction type is formed as a low-resistance non-single semiconductor. In the same manner, a non-single crystal silicon film 12 of an N-type conduction type is formed as the low-resistance non-single semiconductor. The non-single crystal silicon films 12 and 13 are masked to the specific external form pattern of source and drain regions and are subjected to dry etching by a CF4 gas. Then, a molybdenum thin film is formed by sputtering, the source and a drain electrodes 50 and 51 are set by etching, and a thin-film transistor 10 is arranged on the substrate.