发明名称 CLEAVAGE METHOD FOR SEMICONDUCTOR LASER SUBSTRATE
摘要 <p>PROBLEM TO BE SOLVED: To provide a cleavage method for a semiconductor laser substrate, in which cleavage defects such as breakage and crack are significantly reduced in cleaving and separating a semiconductor laser substrate into a bar shape. SOLUTION: In a cleavage method for a semiconductor laser substrate using a cleavage device, which has at least a holder 9 for holding a pressure-sensitive adhesive member 7 for mounting a semiconductor laser substrate 1 having a plurality of scribe flaws 61 , 62 and 63 formed thereon along a cleavage direction and a cover member 8 for covering the semiconductor laser substrate 1, and a push-up member 13 arranged below the pressure-sensitive adhesive member 7 for pushing up the semiconductor laser substrate 1 mounted on the pressure-sensitive adhesive member 7, cleavage is started from the scribe flaw 62 near the center of the semiconductor laser substrate 1 by the push-up member 13.</p>
申请公布号 JPH11251267(A) 申请公布日期 1999.09.17
申请号 JP19980064184 申请日期 1998.02.27
申请人 VICTOR CO OF JAPAN LTD 发明人 NITORI KOICHI
分类号 H01L21/301;H01S5/00;(IPC1-7):H01L21/301;H01S3/18 主分类号 H01L21/301
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