| 摘要 |
PROBLEM TO BE SOLVED: To reduce parasitic capacitance between conducting layer patterns by forming a plurality of the conducting layer patterns on a semiconductor substrate, forming insulating films on the semiconductor substrate and the conducting layer patterns, and forming at least one void in the insulating film between the conducting layer patterns. SOLUTION: A plurality of the conducting layer patterns 42 are arranged in parallel on a semiconductor substrate 40 via a first insulating film 41. Second insulating layers 43 are embedded in parts between the conducting layer patterns 42. The second insulating layers 43 form overhangs protruding from the upper edge parts of the conducting layer patterns 42 toward adjacent conducting layer patterns 42, and tip parts of the neighboring overhangs are brought almost into contact with each other. As a result, voids 44 are formed below the tip parts. Thereby a parasitic capacitance between conducting layer patterns 42 can be reduced, and operation characteristics of a device can be stabilized. |
