| 摘要 |
PURPOSE:To establish the switch which enables circuit integration, has greater current cut-off ability with high dielectric strength, and is low in the forward voltage drop, by adding the branching transistor high in dielectric strength bidirectionally to the circuit. CONSTITUTION:In the semiconductor switch constituted with the PNPN switch consisting of the transistors TrQ1, Q2 and having the anode terminal A and the cathode terminal K and further, gate terminal G, and with NPNTrQ3 for current branching, when TrQ4 for current branching having current amplifying ability the same with bidirectional high dielectric strength as TrQ1 is integrated, it is constituted as transversal PNP Tr construction. Further, since the dielectric strength between the base and emitter of TrQ4 is taken higher, the inverse voltage between the anode and the cathode K is greater. Further, the current share of TrQ3 can be reduced to compensate the lowering in the current amplifying factor at greater current region, and also the forward voltage drop can be lowered than the case of absence of TrQ4. |
