发明名称 |
Synthetic single crystal diamond for wiring drawing dies and process for producing the same |
摘要 |
A synthetic single crystal diamond for wire drawing die; the process of manufacturing it and a wire drawing die to utilize it are disclosed. At least one plane of the diamond for wire drawing die is a cleavage plane of (111) faces, and the drawing hole of wire drawing die lies vertical to the cleavage plane. The diamond for the wire drawing die is produced by providing a synthetic single crystal having 20-400 ppm nitrogen of Ib type diamond. A groove is made on the diamond surface parallel to (111) faces employing energy beams such as a laser beam, an ion beam and an electron beam. A wedge is struck into the groove to cleave the diamond, and a plate is obtained. Furthermore, the plate is divided into polyhedrons, employing either an energy beam or a blade. The cleavage plane of the polyhedron is almost parallel to the (111) faces of crystal, therefore the cleavage plane is used as the standard plane to build the drawing hole.
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申请公布号 |
US6007916(A) |
申请公布日期 |
1999.12.28 |
申请号 |
US19940247601 |
申请日期 |
1994.05.23 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SATOH, SHUICHI;TSUJI, KAZUWO;YOSHIDA, AKITO;URAKAWA, NOBUO |
分类号 |
B21C3/02;B28D5/00;C30B33/00;(IPC1-7):C01B31/06 |
主分类号 |
B21C3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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