发明名称 Synthetic single crystal diamond for wiring drawing dies and process for producing the same
摘要 A synthetic single crystal diamond for wire drawing die; the process of manufacturing it and a wire drawing die to utilize it are disclosed. At least one plane of the diamond for wire drawing die is a cleavage plane of (111) faces, and the drawing hole of wire drawing die lies vertical to the cleavage plane. The diamond for the wire drawing die is produced by providing a synthetic single crystal having 20-400 ppm nitrogen of Ib type diamond. A groove is made on the diamond surface parallel to (111) faces employing energy beams such as a laser beam, an ion beam and an electron beam. A wedge is struck into the groove to cleave the diamond, and a plate is obtained. Furthermore, the plate is divided into polyhedrons, employing either an energy beam or a blade. The cleavage plane of the polyhedron is almost parallel to the (111) faces of crystal, therefore the cleavage plane is used as the standard plane to build the drawing hole.
申请公布号 US6007916(A) 申请公布日期 1999.12.28
申请号 US19940247601 申请日期 1994.05.23
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 SATOH, SHUICHI;TSUJI, KAZUWO;YOSHIDA, AKITO;URAKAWA, NOBUO
分类号 B21C3/02;B28D5/00;C30B33/00;(IPC1-7):C01B31/06 主分类号 B21C3/02
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