发明名称 SEMICONDUCTOR SWITCH CIRCUIT
摘要 PURPOSE:To increase the dv/dt rating while keeping high gate triggering sensitivity, by constituting the switch so that the transient current through the second junction can be supperssed even with steep transient voltage to PNPN switch. CONSTITUTION:Between the gate G and cathode K of PNPN switch 1, the electronic switch 3 is connected, and the transient current input terminal 51 of the capacitive element 5 is connected to the anode A of the switch 1, the transient current output terminal 52 to the control terminal 31 of the switch 3, and the change dischargin terminal 53 to the N base (N1) of the switch 1 respectively. Further, when steep forward voltage is between the anode A and the cathode K, the switch 3 is driven with the transient curent flowing the element 5 to avoid mis-firing. In this case, the charge stored to the element 5 trnsiently, discharges to N1 when the switch 1 is closed. Accordingly, the value of the element 5 is equivalently increased and the control current of the switch 3 is incresed, then the transient current flowing to the second junctions N1, P2 of the switch 1 is not incresed to increse the dv/dt rating.
申请公布号 JPS54159159(A) 申请公布日期 1979.12.15
申请号 JP19780067698 申请日期 1978.06.07
申请人 HITACHI LTD 发明人 SAGAWA AKIO;SUZUKI MASAYOSHI
分类号 H02M1/08;H03K17/16;H03K17/73 主分类号 H02M1/08
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