| 摘要 |
PURPOSE:To avoid external contamination, by providing Mo layer including P on the semiconductor substrate insulation film. CONSTITUTION:The Mo film including P for about 10<10> to 10<20> particles/cm<3> is coated to the SiO2 film on the P type Si substrate by menas of sputtering to form the diode by forming the electrode on it. In this MOS diode, Na<-> ions are caught with P introduced at the boundary between the Mo electrode and the SiO2 film by means of P in the Mo electrode and heating at the heat treatment of 800 to 1000 deg.C. Thus, the possibility of n transformation of the p type substrate surface is less and the element is made stable. Thus, with a simple constitution, more stable device can be established. |
