发明名称 FIELD EFFECT TRANSISTOR CIRCUIT
摘要 PURPOSE:To make it posible to keep the threshold level of a transistor constant by reducing parasitic capacity between an integrated circuit and a base body by constituting the circuit with the base-body potential lower than the reference potential. CONSTITUTION:When any constant voltage V2F developed by using transistors TrQ2f and TrQ2g is applied to TrQ2i, a current flows to Q2i with the threshold level of Q2i lower than V2F, and the potential at node 2G decreases, so that a current will hardly flow to TrQ2j. When the negative potential of the base body falls and the threshold level of Q2i increases nearly up to V2F, no current flows to Q2i, the potential at nod 2G increases causing Q2j to turn ON, and the potential at node 1A increases while that at node 2C decreases, so that it will be prevented that the negative potential of the base body will fall more. Next, when the base-body potential falls, nor current flows to Q2j and a current flows again from the base body to the reference potential via TrQ2d and TrQ2c, so that the base-body potential will fall. Judging from relation (b) between the threshold level of TrQ2b and the base- body potential, the threshold level of Tr can kept constant by controlling the base- body voltage.
申请公布号 JPS54158851(A) 申请公布日期 1979.12.15
申请号 JP19780068591 申请日期 1978.06.06
申请人 NIPPON ELECTRIC CO 发明人 SAITOU MANZOU
分类号 H01L27/04;H01L21/822;H03K17/14;H03K19/094 主分类号 H01L27/04
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