| 摘要 |
PURPOSE:To develop arbitrary potential at the substrate, which is not limited with the power supply potential and the threshold value voltate of FET, by connecting three or more FET's in series between the semiconductor substrate and the reference potential and connecting one end of the capacitive element to each junction point. CONSTITUTION:In the integrated circuit using FET, between the substrate and ground, for example, the drain and gate of the n channel transistors TrQ23, Q24, Q25 are commonly connected, with the source to ground in series. At the two junction points B21 and B22, one end of the depletion type FETQ21, Q22 connecting the source and drain as the capacitive element is connected, and periodical oscillation waves are inputted to other ends A21 and A22. Further, when the potential of the node B21 is greater than the reference potential, and the potential at the node B22 is than the potential at the node B21, and they are greater than the threshold voltage of TrQ23, Q24 respectively, current flows and the reference potential falls down, and the absolute value of the maximum potential caused on the substrate is close to the value of the two times the power supply potential subtracted with the threshold value voltage of TrQ23, Q24, Q25. |
