| 摘要 |
PURPOSE:To increase the conductivity of CdS sintering film, by not mixing foreign material to CdS paste and adjusting the atmosphere so that at CdS coating film sintering includes a trace of Cd vapor. CONSTITUTION:The substrate 2 coating CdS 1 is contained in the vessel 5 together with the mixture 3 of CdS and CdO or the mixture 4 of CdS and CdSO4, it is covered with the cover 6 and sintered at 600 to 800 deg.C. Cd vapor is produced together with the sintering of CdS coating film, and the conductivity is remarkably increased as the result of difference from the composition by chemical quantity theory in the CdS film. Further, the mixture of CdS and CdSO4 acts strongly. As the sintering atmosphere, N2 is used. If the atmosphere including 1 to 20% of O2 is used only for the first half of process, the sintering film excellent in photo transparency can be achieved. |
